TTA009 - Silicon PNP Epitaxial Type Bipolar Transistors

Product Overview

Toshiba

Part number	TTA009
Manufacturer	Toshiba
File Size	219.19 KB
Description	Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet	TTA009 Datasheet
Additional preview pages of the TTA009 datasheet.

(1) Low collector saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching : tstg = 300 ns (typ. ) (IC = -1 A) 3. Packaging and Internal Circuit TTA009 New PW-Mold 1. Base 2. Collector (Heatsink) 3. Emitter Start of commercial production 2015-04 1 2015-06-19 Rev.1.0 TTA009 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter volt.

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Published: Apr 29, 2024 |