• Part: TTA009
  • Description: Silicon PNP Epitaxial Type Bipolar Transistors
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 219.19 KB
Download TTA009 Datasheet PDF
Toshiba
TTA009
Features (1) Low collector saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 m A) (2) High-speed switching : tstg = 300 ns (typ.) (IC = -1 A) 3. Packaging and Internal Circuit New PW-Mold 1. Base 2. Collector (Heatsink) 3. Emitter Start of mercial production 2015-04 2015-06-19 Rev.1.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 Collector-emitter voltage VCEO -80 Emitter-base voltage VEBO -7 Collector current (DC) (Note 1) -3 Collector current (pulsed) (Note 1) -5 Base...