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TTA008B - Silicon PNP Epitaxial Type Bipolar Transistors

Key Features

  • (1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A) (3) High-speed switching : tstg = 300 ns (typ. ) (IC = -1A) (4) Complementary to TTC015B 3. Packaging and Internal Circuit (Note) TTA008B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated d.

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Datasheet Details

Part number TTA008B
Manufacturer Toshiba
File Size 313.29 KB
Description Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet download datasheet TTA008B Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistors Silicon PNP Epitaxial Type TTA008B 1. Applications • Power Amplifiers • Power Switching 2. Features (1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A) (3) High-speed switching : tstg = 300 ns (typ.) (IC = -1A) (4) Complementary to TTC015B 3. Packaging and Internal Circuit (Note) TTA008B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. Start of commercial production 2013-09 1 2015-01-22 Rev.1.0 TTA008B 4.