Datasheet Summary
Bipolar Transistors Silicon PNP Epitaxial Type
1. Applications
- Power Amplifiers
- Power Switching
2. Features
(1) High DC current gain
: hFE = 100 to 200 (IC = -0.5 A)
(2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A)
(3) High-speed switching
: tstg = 300 ns (typ.) (IC = -1A)
(4) plementary to TTC015B
3. Packaging and Internal Circuit (Note)
1. Emitter 2. Collector 3. Base
TO-126N
Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from...