TTA003 - Silicon PNP Epitaxial Type Bipolar Transistors

Product Overview

Toshiba

Part number	TTA003
Manufacturer	Toshiba
File Size	177.81 KB
Description	Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet	TTA003 Datasheet
Additional preview pages of the TTA003 datasheet.

(1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching: tstg = 300 ns (typ. ) 3. Packaging and Internal Circuit TTA003 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power di.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Apr 29, 2024 |