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TTA004B - Silicon PNP Epitaxial Type Bipolar Transistors

Key Features

  • (1) High collector voltage: VCEO = -160 V (min) (2) Complementary to TTC004B (3) Small collector output capacitance: Cob = 17 pF (typ. ) (4) High transition frequency: fT = 100 MHz (typ. ) 3. Packaging and Internal Circuit (Note) TTA004B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to elec.

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Datasheet Details

Part number TTA004B
Manufacturer Toshiba
File Size 183.59 KB
Description Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet download datasheet TTA004B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistors Silicon PNP Epitaxial Type TTA004B 1. Applications • Audio-Frequency Amplifiers 2. Features (1) High collector voltage: VCEO = -160 V (min) (2) Complementary to TTC004B (3) Small collector output capacitance: Cob = 17 pF (typ.) (4) High transition frequency: fT = 100 MHz (typ.) 3. Packaging and Internal Circuit (Note) TTA004B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. ©2016 Toshiba Corporation 1 Start of commercial production 2013-05 2017-01-09 Rev.2.0 TTA004B 4.