TTA008B Datasheet Silicon PNP Epitaxial Type Bipolar Transistors

Manufacturer: Toshiba

Overview: Bipolar Transistors Silicon PNP Epitaxial Type TTA008B 1. Applications • Power Amplifiers • Power Switching 2.

Datasheet Details

Part number	TTA008B
Manufacturer	Toshiba
File Size	313.29 KB
Description	Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet	TTA008B-Toshiba.pdf

(1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A) (3) High-speed switching : tstg = 300 ns (typ. ) (IC = -1A) (4) Complementary to TTC015B 3. Packaging and Internal Circuit (Note) TTA008B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated d.

Part Number	Description
TTA003	Silicon PNP Epitaxial Type Bipolar Transistors
TTA004	Silicon PNP Epitaxial Type Transistor
TTA004B	Silicon PNP Epitaxial Type Bipolar Transistors
TTA005	Silicon PNP Epitaxial Type Bipolar Transistors
TTA006B	Silicon PNP Transistors
TTA009	Silicon PNP Epitaxial Type Bipolar Transistors
TTA010	Silicon PNP Triple-Diffused Type Bipolar Transistors
TTA011	Silicon PNP Epitaxial Type Bipolar Transistors
TTA012	Silicon PNP Epitaxial Type Bipolar Transistors
TTA013	Silicon PNP Epitaxial Type Bipolar Transistors