TTA008B - Silicon PNP Epitaxial Type Bipolar Transistors

Product Overview

Toshiba

Part number	TTA008B
Manufacturer	Toshiba
File Size	313.29 KB
Description	Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet	TTA008B Datasheet
Additional preview pages of the TTA008B datasheet.

(1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A) (3) High-speed switching : tstg = 300 ns (typ. ) (IC = -1A) (4) Complementary to TTC015B 3. Packaging and Internal Circuit (Note) TTA008B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated d.

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Published: Apr 29, 2024 |