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Toshiba Electronic Components Datasheet

TTA1713 Datasheet

Silicon PNP Transistor

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Bipolar Transistors Silicon PNP Epitaxial Type
TTA1713
1. Applications
• Low-Frequency Power Amplifiers
2. Packaging and Internal Circuit
TTA1713
1: Base
2: Emitter
3: Collector
S-Mini
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-45
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-500
mA
Base current
IB
-50
mA
Collector power dissipation
(Note 1)
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
- 55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 0.42 mm2 × 3)
©2017-2018
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2017-06
2018-05-28
Rev.1.0


Toshiba Electronic Components Datasheet

TTA1713 Datasheet

Silicon PNP Transistor

No Preview Available !

4. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Test Condition
Min
Collector cut-off current
ICBO
VCB = -50 V , IE = 0 mA
Emitter cut-off current
IEBO
VEB = -5 V, IC = 0 mA
DC current gain
hFE(1) (Note 1) VCE = -1 V, IC = -100 mA
120
hFE(2)
VCE = -1 V, IC = -500 mA
40
Collector-emitter saturation
VCE(sat)
IC = -500 mA, IB = -50 mA
voltage
Base-emitter voltage
Transition frequency
VBE
VCE = -1 V, IC = -100 mA
fT
VCE = -5 V, IC = -10 mA,
80
f = 100 MHz
Collector output capacitance
Cob
VCB = -10 V , IE = 0 mA,
f = 1 MHz
Note 1: hFE classification: Y rank 120 to 270, GR rank 180 to 390
5. Marking
TTA1713
Typ. Max Unit
-100 nA
-100 nA
390
-0.4
V
-1.0
V
MHz
4
pF
hFE rank: Y
hFE rank: GR
©2017-2018
Toshiba Electronic Devices & Storage Corporation
2
2018-05-28
Rev.1.0


Part Number TTA1713
Description Silicon PNP Transistor
Maker Toshiba
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TTA1713 Datasheet PDF






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