* (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015 Toshiba Corporation 1 Star
TTD1415B Datasheet (181.73 KB)
TTD1415B
181.73 KB
Silicon npn transistor.
Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B 1. Applications High-Power Switching Hammer Drivers 2. Fe.
📁 Related Datasheet
TTD1415 NPN Transistor (INCHANGE)
TTD1415B Silicon NPN Power Transistor (Inchange)
TTD1410 NPN Transistor (INCHANGE)
TTD1409B NPN Transistor (INCHANGE)
TTD115N08A 85V N-Channel Trench MOSFET (Unigroup)
TTD120N03AT 30V N-Channel MOSFET (Unigroup)
TTD135N68A 68V N-Channel Trench MOSFET (Unigroup)
TTD18P10AT 100V P-Channel Trench MOSFET (Unigroup)
TTD70N07A N-Channel Trench MOSFET (Unigroup)
TTD70P04AT 40V P-Channel Trench MOSFET (Unigroup)
