TTD1415B transistor equivalent, silicon npn transistor.
(1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complemen.
* High-Power Switching
* Hammer Drivers
2. Features
(1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = .
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