XPH13016MC
XPH13016MC is Silicon P-Channel MOSFET manufactured by Toshiba.
1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 9.9 mΩ (typ.) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (5) Enhancement mode: Vth = -1.0 to -2.1 V (VDS = -10 V, ID = -0.6 m A)
3. Packaging and Internal Circuit
SOP Advance(WF)
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2022-2023
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2023-05
2023-09-28 Rev.2.0
4. Absolute Maximum Ratings (Note) (Ta = 25
- unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation
(Tc = 25
- ) (t = 10 s)
(Note 1) (Note 1)
(Note 2)
VDSS VGSS
ID IDP PD
-60
+10/-20
-60
-120
Power dissipation
(t = 10 s)
(Note 3)
Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage...
