* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ.) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (5) Enhancement mode: Vth = -1.0 to -2.1 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit XPH8R316MC SOP
XPH8R316MC Datasheet (647.40 KB)
XPH8R316MC
647.40 KB
Silicon p-channel mosfet.
MOSFETs Silicon P-Channel MOS (U-MOS ) XPH8R316MC 1. Applications Automotive Switching Voltage Regulators DC-DC Conv.
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