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Toshiba Electronic Components Datasheet

1SS374 Datasheet

Silicon Epitaxial Schottky Barrie Diode

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS374
High Speed Switching Application
1SS374
Unit: mm
z Small package
z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
15 V
Reverse voltage
VR 10 V
Maximum (peak) forward current
IFM
200 *
mA
Average forward current
Surge current (10ms)
Power dissipation
IO
IFSM
P
100 *
1*
150
mA
A
mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55 to 125
°C
Operating temperature range
Topr
40 to 100
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
SC-59
TOSHIBA
1-3G1G
Weight: 0.012g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
IF = 1mA
IF = 5mA
IF = 100mA
VR = 10V
VR = 0, f = 1MHz
Min Typ. Max Unit
0.18
0.23 0.30 V
0.35 0.50
― ― 20 μA
20 40 pF
Marking
Start of commercial production
1993-04
1 2014-03-01


Toshiba Electronic Components Datasheet

1SS374 Datasheet

Silicon Epitaxial Schottky Barrie Diode

No Preview Available !

1SS374
2 2014-03-01


Part Number 1SS374
Description Silicon Epitaxial Schottky Barrie Diode
Maker Toshiba Semiconductor
Total Page 3 Pages
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