1SS372 Datasheet - Toshiba Semiconductor

1SS372 Silicon Epitaxial Schottky Barrie Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application 1SS372 Unit: mm z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 1 100 mA A mW Junction temperat.

1SS372_ToshibaSemiconductor.pdf