1SS377 Datasheet - Toshiba Semiconductor

1SS377 Silicon Epitaxial Schottky Barrie Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching 1SS377 Unit: mm z Low forward voltage z Small package : VF = 0.23V (typ.) @IF = 5mA : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) Power dissipation IFSM P 1 A 150 mW Junction tempera.

1SS377_ToshibaSemiconductor.pdf