1SS373
Toshiba ↗ Semiconductor
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Diode.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS373
High Speed Switching Application
Small package Low forward voltage: VF = 0.23V (typ.) @IF.
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:.
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1SS372 - Silicon Epitaxial Schottky Barrie Diode
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS372
High Speed Switching Application
1SS372
Unit: mm
z Small package z Low forward voltage:.
