Datasheet4U Logo Datasheet4U.com

1SS373 - Diode

1SS373 Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Small package Low forward voltage: VF = 0.23V (typ.) @IF.

1SS373 Applications

* of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORA

📥 Download Datasheet

Preview of 1SS373 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 1SS370 - Surface Mount Switching Diode (GME)
  • 1SS375 - Schottky Barrier Diode (Sanyo Semicon Device)
  • 1SS376 - Switching diode (Rohm)
  • 1SS301 - SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR)
  • 1SS302 - ULTRA HIGH SPEED SWITCHING APPLICATIONS (Guangdong Kexin Industrial)
  • 1SS302A - Silicon Epitaxial Planar Switching Diodes (Toshiba)
  • 1SS307E - Diode (Toshiba)
  • 1SS313 - VHF TUNER BAND SWITCH APPLICATIONS DIODES (Kexin)

📌 All Tags

Toshiba Semiconductor 1SS373-like datasheet