1SS373 Datasheet - Toshiba Semiconductor

1SS373 Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA 1SS373 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 Reverse voltage VR 10 Maximum (peak) forward current IFM 200 Average forward current IO 100 Surge current (10ms) IFSM 1 Power dissipation P 150 Junction temperature Tj 125 Storage temperature range.

1SS373_ToshibaSemiconductor.pdf