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1SS378 Datasheet - Toshiba Semiconductor

1SS378 Silicon Epitaxial Schottky Barrie Diode

TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching 1SS378 Unit: mm z Low forward voltage z Small package : VF = 0.23V (typ.) @IF = 5mA : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 15 10 200 100 1 100 V V mA mA A mW Junction temperature .

1SS378 Datasheet (204.47 KB)

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Datasheet Details

Part number:

1SS378

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

204.47 KB

Description:

Silicon epitaxial schottky barrie diode.

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1SS378 Silicon Epitaxial Schottky Barrie Diode Toshiba Semiconductor

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