1SS374 Datasheet - Toshiba Semiconductor

1SS374 Silicon Epitaxial Schottky Barrie Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Application 1SS374 Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 1 150 mA A mW Junction temp.

1SS374_ToshibaSemiconductor.pdf