1SS379 Silicon Epitaxial Schottky Barrie Diode

Toshiba Semiconductor

Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS379 General Purpose Rectifier Applications 1SS379 Unit: mm * AEC-Q101 Qualified (Note1) * Sm.

📥 Download Datasheet

1SS379 Datasheet Preview — Preview of 1SS379 PDF

Datasheet Specifications

Part number: 1SS379
Manufacturer: Toshiba ↗ Semiconductor
File Size: 760.12 KB
Datasheet: 1SS379_ToshibaSemiconductor.pdf
Description: Silicon Epitaxial Schottky Barrie Diode

Applications

* 1SS379 Unit: mm
* AEC-Q101 Qualified (Note1)
* Small package : SC-59
* Low forward voltage : VF = 1.0 V (typ. )
* Low reverse current : IR = 0.1 nA (typ. )
* Small total capacitance : CT = 3.0 pF (typ. ) Note1: For detail information, please contact our sales. Absolute Ma

1SS379 Distributors

📁 Related Datasheet

1SS370 1SS375 1SS376 1SS300 1SS301 1SS302

📌 All Tags

1SS379 Silicon Epitaxial Schottky Barrie Diode Toshiba Semiconductor

Toshiba Semiconductor 1SS379-like datasheet