1SS379 Datasheet - Toshiba Semiconductor

1SS379, Silicon Epitaxial Schottky Barrie Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS379 General Purpose Rectifier Applications 1SS379 Unit: mm * AEC-Q101 Qualified (Note1) * Sm.

Applications

* 1SS379 Unit: mm
* AEC-Q101 Qualified (Note1)
* Small package : SC-59
* Low forward voltage : VF = 1.0 V (typ. )
* Low reverse current : IR = 0.1 nA (typ. )
* Small total capacitance : CT = 3.0 pF (typ. ) Note1: For detail information, please contact our sales. Absolute Ma

1SS379_ToshibaSemiconductor.pdf