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1SS379 Datasheet - Toshiba Semiconductor

1SS379 Silicon Epitaxial Schottky Barrie Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS379 General Purpose Rectifier Applications 1SS379 Unit: mm AEC-Q101 Qualified (Note1) Small package : SC-59 Low forward voltage : VF = 1.0 V (typ.) Low reverse current : IR = 0.1 nA (typ.) Small total capacitance : CT = 3.0 pF (typ.) Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V R.

1SS379 Datasheet (760.12 KB)

Preview of 1SS379 PDF

Datasheet Details

Part number:

1SS379

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

760.12 KB

Description:

Silicon epitaxial schottky barrie diode.

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1SS379 Silicon Epitaxial Schottky Barrie Diode Toshiba Semiconductor

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