Click to expand full text
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020
Power Amplifier Applications Power Switching Applications
• Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC2655
2SA1020
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
−50
V
−50
V
−5
V
−2
A
−0.2
A
900
mW
150
°C
−55 to 150
°C
JEDEC JEITA TOSHIBA
TO-92MOD ―
2-5J1A
Note: Using continuously under heavy loads (e.g.
2SA1020 Datasheet
