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2SB1015 Datasheet, Toshiba Semiconductor

2SB1015 transistor equivalent, silicon pnp transistor.

2SB1015 Avg. rating / M : 1.0 rating-14

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2SB1015 Datasheet

Features and benefits

. Low Collector Saturation Vol tage : VC E(sat)=-1.0V(Max.) at Ic=-3A, I B=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406 MAXIMUM RATI.

Application

10.3MAX. Unit in mm FEATURES . Low Collector Saturation Vol tage : VC E(sat)=-1.0V(Max.) at Ic=-3A, I B=-0.3A . Coll.

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2SB1015 Page 1 2SB1015 Page 2

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