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Toshiba Electronic Components Datasheet

2SC2216 Datasheet

Silicon NPN Epitaxial Planar Type Transistor

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2SC2216,2SC2717
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC2216,2SC2717
TV Final Picture IF Amplifier Applications
Unit: mm
· High gain: Gpe = 33dB (typ.) (f = 45 MHz)
· Good linearity of hFE.
Maximum Ratings (Ta = 25°C)
Characteristics
2SC2216
Collector-base voltage
2SC2717
Collector-emitter
voltage
2SC2216
2SC2717
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
Rating
50
30
45
25
4
50
-50
300
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1E
Weight: 0.21 g (typ.)
Characteristics
2SC2216
Collector cut-off current
2SC2717
Emitter cut-off current
Collector-emitter
breakdown voltage
2SC2216
2SC2717
DC current gain
2SC2216
2SC2717
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Collector-base time constant
Transition frequency
Power gain (Figure 1)
2SC2216
2SC2717
Symbol
ICBO
IEBO
Test Condition
VCB = 50 V, IE = 0
VCB = 30 V, IE = 0
VEB = 3 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE VCE = 12.5 V, IC = 12.5 mA
VCE (sat)
VBE (sat)
Cob
Ccrbb’
fT
Gpe
IC = 15 mA, IB = 1.5 mA
IC = 15 mA, IB = 1.5 mA
VCB = 10 V, IE = 0, f = 30 MHz
VCB = 10 V, IE = -1 mA, f = 30 MHz
VCE = 12.5 V, IC = 12.5 mA
VCC = 12.5 V, IE = -12.5 mA,
f = 45 MHz
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.1 mA
45 ¾ ¾
25 ¾ ¾
V
40 ¾ 140
40 ¾ 240
¾ ¾ 0.2 V
¾ ¾ 1.5 V
0.8 ¾ 2.0 pF
¾ ¾ 25 ps
300 ¾
¾ MHz
29 ¾ 36
dB
28 ¾ 36
1 2003-03-27


Toshiba Electronic Components Datasheet

2SC2216 Datasheet

Silicon NPN Epitaxial Planar Type Transistor

No Preview Available !

2SC2216,2SC2717
Figure 1 45 MHz Gpe Test Circuit
2 2003-03-27


Part Number 2SC2216
Description Silicon NPN Epitaxial Planar Type Transistor
Maker Toshiba Semiconductor
Total Page 5 Pages
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