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2SC3668 Silicon NPN Epitaxial Type TRANSISTOR

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Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3668 Power Amplifier Applications Power Switching Applications 2SC3668 Unit: mm <.

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Features

* Administration Regulations. Export and re-export of Product or related software or technology

Applications

* Power Switching Applications 2SC3668 Unit: mm
* Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
* High collector power dissipation: PC = 1000 mW
* High-speed switching: tstg = 1.0 μ (typ. )
* Complementary to 2SA1428. Absolute Maximum Ratings (Ta = 25°C)

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📁 Related Datasheet

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Silicon NPN Epitaxial Type TRANSISTOR Toshiba Semiconductor
Toshiba Semiconductor 2SC3668-like datasheet