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2SC3671 Silicon NPN Transistor

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Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications 2SC3671 Unit: mm <.

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Applications

* Medium Power Amplifier Applications 2SC3671 Unit: mm
* High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)
* Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
* High collecto

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Silicon NPN Transistor Toshiba Semiconductor
Toshiba Semiconductor 2SC3671-like datasheet