2SD1224 Datasheet (Toshiba Semiconductor)

2SD1224 Description

2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm * High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) * Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Col

2SD1224, Silicon NPN Transistor - Toshiba Semiconductor

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2SD1224 Description