2SD1409A
2SD1409A is NPN Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
High Voltage Switching Applications
Industrial Applications Unit: mm
- -
High DC current gain: h FE = 600 (min.) (VCE = 2 V, IC = 2 A) Monolithic construction with built-in base-emitter shunt resistor
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C ymbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 600 400 5 6 1 2.0 25 150
- 55 to 150 Unit V V V A A W °C °C
JEDEC JEITA
― SC-67
TOSHIBA 2-10R1A Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector Base ≈ 2.5 kΩ ≈ 200 Ω Emitter
2009-12-21 http://..
Electrical Characteristics (Ta = 25°C)
Characteristics S Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-collector forward voltage Collector output capacitance Turn-on time ymbol ICBO IEBO V (BR) CEO h FE (1) h FE (2) VCE (sat) VBE (sat) VECF Cob ton IB1 Test Condition VCB = 600 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 m A, IB = 0 VCE = 2 V, IC = 2 A VCE = 2 V, IC = 4 A IC = 4 A, IB = 0.04 A IC = 4 A, IB = 0.04 A IE = 4 A, IB = 0 VCB = 50 V, IE = 0, f = 1 MHz Output 25 Ω Min ―...
