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Toshiba Electronic Components Datasheet

2SD1409A Datasheet

NPN Transistor

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2SD1409A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1409A
High Voltage Switching Applications
Industrial Applications
Unit: mm
High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A)
Monolithic construction with built-in base-emitter shunt resistor
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S
ymbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
600
400
5
6
1
2.0
25
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
SC-67
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10R1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.7 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Base
Collector
≈ 2.5 kΩ
≈ 200 Ω
Emitter
1 2009-12-21
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Toshiba Electronic Components Datasheet

2SD1409A Datasheet

NPN Transistor

No Preview Available !

Electrical Characteristics (Ta = 25°C)
2SD1409A
Characteristics S
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Emitter-collector forward voltage
Collector output capacitance
ymbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
VECF
Cob
VCB = 600 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 2 A
VCE = 2 V, IC = 4 A
IC = 4 A, IB = 0.04 A
IC = 4 A, IB = 0.04 A
IE = 4 A, IB = 0
VCB = 50 V, IE = 0, f = 1 MHz
Min Typ. Max
400
600
100
35
0.5
3
――
――
――
2.0
2.5
3.0
Unit
mA
mA
V
V
V
V
pF
Turn-on time
Switching time Storage time
Fall time
ton
20 μs
Input IB1
Output
1
tstg IB2
VCC = 100 V
tf IB1 = 0.04 A,IB2 = 0.04 A
duty cycle 1%
8
5
― μs
Marking
D1409A
Part No. (or abbreviation code)
Lot No.
Note2
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2009-12-21


Part Number 2SD1409A
Description NPN Transistor
Maker Toshiba Semiconductor
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2SD1409A Datasheet PDF






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