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2SJ72 - Silicon P-Channel Transistor

Key Features

  • . Recommended for first stages of EQ Amplifiers and M. C. Head Amplifiers.
  • High jy fs ) : |yfsl=40mS(Typ. )(VDS =-10V, VGS=0, IDSS=-5mA) . Low Noise : NF=1.0dB (Typ. ) (VDS =-10V, ID=-5mA, f=lkHz, Rg=100ft) . High Input Impedance : I GSS =lnA (Max. ) (V GS=25V) . High Drain Power Dissipation : PD=600mW . Complementary to 2SK147 Unit in mm Z54.

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Datasheet Details

Part number 2SJ72
Manufacturer Toshiba
File Size 115.11 KB
Description Silicon P-Channel Transistor
Datasheet download datasheet 2SJ72 Datasheet

Full PDF Text Transcription for 2SJ72 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SJ72. For precise diagrams, and layout, please refer to the original PDF.

SILICON P CHANNEL JUNCTION TYPE 2SJ72 LOW NOISE AUDIO AMPLIFIER APPLICATIONS. FEATURES . Recommended for first stages of EQ Amplifiers and M.C. Head Amplifiers. • High jy...

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for first stages of EQ Amplifiers and M.C. Head Amplifiers. • High jy fs ) : |yfsl=40mS(Typ.)(VDS =-10V, VGS=0, IDSS=-5mA) . Low Noise : NF=1.0dB (Typ.) (VDS =-10V, ID=-5mA, f=lkHz, Rg=100ft) . High Input Impedance : I GSS =lnA (Max.) (V GS=25V) . High Drain Power Dissipation : PD=600mW . Complementary to 2SK147 Unit in mm Z54 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL vgds IG PD T J Tstg RATING UNIT 25 V -10 mA 600 mW 125 °C -55^125 °C . OIIL-IUI -1 1. DRAIN S 2. GATE d 3. SOURCE T0-92M0D EIAJ 2-5 JIB Weight : 0.