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Toshiba Electronic Components Datasheet

2SK2466 Datasheet

N-CHANNEL MOS TYPE TRANSISTOR

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2SK2466
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (UMOS)
2SK2466
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
l 4 V gate drive
l Low drainsource ON resistance : RDS (ON) = 34 m(typ.)
l High forward transfer admittance : |Yfs| = 30 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 100 V)
l Enhancementmode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
100
100
±20
30
120
40
293
30
4
150
55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
3.125
62.5
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 525 µH, RG = 25 , IAR = 30 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-02-06


Toshiba Electronic Components Datasheet

2SK2466 Datasheet

N-CHANNEL MOS TYPE TRANSISTOR

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 15 A
VGS = 10 V, ID = 15 A
VDS = 10 V, ID = 15 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD 80 V, VGS = 10 V, ID = 30 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 30 A, VGS = 0 V
IDR = 30 A, VGS = 0 V
dIDR / dt = 50 A / µs
Marking
2SK2466
Min Typ. Max Unit
— — ±10
— — 100
100 —
0.8 — 2.0
— 40 70
— 34 46
13 30 —
— 3250 —
— 230 —
— 520 —
µA
µA
V
V
m
S
pF
— 33 —
— 60 —
ns
— 95 —
— 230 —
— 68 —
— 46 — nC
— 22 —
Min Typ. Max Unit
— — 30 A
— — 120 A
1.7
V
— 120 —
ns
— 280 —
µC
2 2002-02-06


Part Number 2SK2466
Description N-CHANNEL MOS TYPE TRANSISTOR
Maker Toshiba Semiconductor
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2SK2466 Datasheet PDF






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