Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
High-Power Amplifier Application
- High breakdown voltage: VDSS = 180 V
- High forward transfer admittance: |Yfs| = 4.0 S (typ.)
Unit:...
- Part: 2SK2467
- Description: N-Channel MOSFET
- Manufacturer: Toshiba
- Size: 101.89 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
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