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Toshiba Electronic Components Datasheet

2SK3078 Datasheet

SILICON N CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR

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2SK3078
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3078
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These
TOSHIBA products are neither intended nor warranted for any other use.Do
not use these TOSHIBA products listed in this document except for high
frequency Power Amplifier of telecommunications equipment.
Unit: mm
z Output Power
z Gain
z Drain Efficiency
: PO = 27.0 dBmW (Min.)
: GP = 12.5 dB (Min.)
: ηD = 46% (Typ.)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Channel Temperature
Storage Temperature Range
VDSS
VGSS
ID
PD (Note 1)
Tch
Tstg
10
5
0.5
3.0
150
45~150
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
SC62
25K1D
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB
MARKING
Part No. (or abbreviation code)
UW
Lot No.
12
1. Gate
2. Source
3. Drain
3
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
1
2007-11-01


Toshiba Electronic Components Datasheet

2SK3078 Datasheet

SILICON N CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR

No Preview Available !

2SK3078
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
Output Power
Drain Efficiency
Power Gain
PO VDS = 4.8 V
ηD
Iidle = 108 mA (VGS = adjust)
f = 915 MHz, Pi = 14.5 dBmW
GP
27.0
46.0
12.5
Threshold Voltage
Vth VDS = 4.8 V, ID = 0.5 mA
0.20
1.20
Drain Cut-off Current
IDSS
VDS = 10 V, VGS = 0 V
――
10
Gate-Source Leakage Current
IGSS
VGS = 5 V, VDS = 0 V
――
5
Note 2: These characteristic values are measured using measurement tools specified by Toshiba.
dBmW
%
dB
V
μA
μA
RF OUTPUT POWER TEST FIXTURE
2 2007-11-01


Part Number 2SK3078
Description SILICON N CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
Maker Toshiba Semiconductor
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2SK3078 Datasheet PDF






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