Datasheet Summary
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telemunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telemunications equipment.
Unit: mm z Output Power z Gain z Drain Efficiency
: PO = 27.0 dBmW (Min.) : GP = 12.5 dB (Min.) : ηD = 46%...