TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These
TOSHIBA products are neither intended nor warranted for any other use.Do
not use these TOSHIBA products listed in this document except for high
frequency Power Amplifier of telecommunications equipment.
z Output Power
z Drain Efficiency
: PO = 27.0 dBmW (Min.)
: GP = 12.5 dB (Min.)
: ηD = 46% (Typ.)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Storage Temperature Range
PD (Note 1)
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB
Part No. (or abbreviation code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.