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Toshiba Electronic Components Datasheet

2SK3506 Datasheet

N-Channel MOSFET

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2SK3506
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3506
Relay Drive and DC-DC Converter Applications
Motor Drive Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 16 m(typ.)
High forward transfer admittance: |Yfs| = 26 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 30 V)
www.DataSheet4U.cEonmhancement model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
45
135
100
220
45
10
150
55 to150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
1.25 °C/W
50 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 78 μH, IAR = 45 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2006-11-16


Toshiba Electronic Components Datasheet

2SK3506 Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics (Ta = 25°C)
2SK3506
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
www.DataSheet4U.com
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 30 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 25 A
VDS = 10 V, ID = 25 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ ⎯ ±10 μA
⎯ ⎯ 100 μA
30 ⎯ ⎯
V
1.5 3.0
V
16 20 mΩ
13 26
S
1500
480
pF
680
tr
VG1S0 V
ton 0 V
tf
11
ID = 25 A
VOUT
18
RL = 1.2 Ω
ns
60
toff Duty <= 1%, tw = 10 μs VDD ∼− 30 V
130
Qg
Qgs VDD ∼− 24 V, VGS = 10 V, ID = 45 A
Qgd
39
25 nC
14
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 45 A, VGS = 0 V
IDR = 45 A, VGS = 0 V,
dIDR/dt = 50 A/μs
Min Typ. Max Unit
⎯ ⎯ 45 A
⎯ ⎯ 135 A
⎯ ⎯ −1.7 V
100
ns
200 nC
Marking
TOSHIBA
K3506
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-16


Part Number 2SK3506
Description N-Channel MOSFET
Maker Toshiba Semiconductor
PDF Download

2SK3506 Datasheet PDF






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