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2SK3667
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3667
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 7.5 30 45 189 7.5 4.5 150 -55~150 A W mJ A mJ °C °C
1: Gate 2: Drain 3: Source
Unit V V V
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2)
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2SK3667 Datasheet
