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2SK3662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII)
2SK3662
Switching Regulator, DC−DC Converter, Motor Drive Applications
• • • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 55 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Unit: mm
• Enhancement mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) www.DataSheet4U.com
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR (Note 3) Channel temperature Storage temperature range EAR Tch Tstg Rating 60 60 ±20 35 105 35 204 35 3.
2SK3662 Datasheet
