2SK3669 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII) Switching Regulator, Audio Amplifier and Motor Drive Applications - - - Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) Unit: mm - Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 m A) .. Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR (Note 3) Channel temperature Storage temperature range EAR Tch Tstg Rating 100 100 ±20 10 15 28 20 280 10 2 150 - 55 to 150 W m J A m J °C °C A Unit V V V Pulse (tw ≤ 10 ms) (Note 1) Pulse (tw ≤ 1 ms) (Note 1) JEDEC JEITA TOSHIBA ― ― 2-7J1B Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch- c) Rth (ch- a) Max 6.25 125 Unit °C/ W °C/ W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 3.44 m H, IAR = 10 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is...