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2SK3994 - N-Channel MOSFET

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  • stems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling eq.

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www.DataSheet4U.com 2SK3994 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK3994 Switching Regulator, DC/DC Converter Applications Motor Drive Applications z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 90 mΩ (typ.) : |Yfs| = 10 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 250 V) : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±30 20 80 45 487 20 4.
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