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2SK4021 - N-Channel MOSFET

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  • ly injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety device.

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Datasheet Details

Part number 2SK4021
Manufacturer Toshiba
File Size 257.55 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK4021 Datasheet

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www.DataSheet4U.com 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4021 Switching Regulators and DC-DC Converter Applications Motor Drive Applications 6.5 ± 0.2 5.2 ± 0.2 1.5 ± 0.2 Unit: mm 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance: |Yfs| = 4.5 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) z Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 1.6 0.9 4.1 ± 0.2 5.5 ± 0.2 1.1 ± 0.2 0.6 MAX. Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±20 4.5 18 20 51 4.5 2.