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2SK4026 - N-Channel MOSFET

Key Features

  • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ. ) High forward transfer admittance: |Yfs| = 0.85 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) ０．９ １．６ ５．５±０．２ １．１±０．２ ４．１±０．２ ５．７ ０．６ MAX ２．３ ２．３ ２．３±０．２ ０．６±０．１５ ０．６±０．１５ Absolute Maximum Ratings (Ta = 25°C) １ ２ ３ Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain curren.

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Datasheet Details

Part number 2SK4026
Manufacturer Toshiba
File Size 235.40 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK4026 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V) 2SK4026 Switching Regulator Applications ６．５±０．２ ５．２±０．２ １．５±０．２ Unit: mm ０．６ MAX． Features • • • • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) Enhancement mode: Vth = 2.0 to 4.