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2SK4021
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)
2SK4021
Switching Regulators and DC-DC Converter Applications Motor Drive Applications
6.5 ± 0.2 5.2 ± 0.2 1.5 ± 0.2
Unit: mm
0.6 MAX.
z Low drain-source ON-resistance: RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance: |Yfs| = 4.5 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) z Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
1.6 0.9 4.1 ± 0.2
5.5 ± 0.2
1.1 ± 0.2 0.6 MAX.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±20 4.5 18 20 51 4.5 2.