2SK4023
Key Features
- 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 450 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
