2SK4022 Overview
mm ０．６ MAX． 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current:.
Datasheet Details
| Part number | 2SK4022 |
|---|---|
| Datasheet | 2SK4022_ToshibaSemiconductor.pdf |
| File Size | 233.83 KB |
| Manufacturer | Toshiba |
| Description | N-Channel MOSFET |
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