GT10Q101 Datasheet, Toshiba Semiconductor

GT10Q101 igbt equivalent, silicon n-channel igbt.

GT10Q101

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GT10Q101 Datasheet

Application

Unit: mm
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* The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Volta.

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Toshiba Semiconductor

Manufacturer

Toshiba (https://www.toshiba.com/) Semiconductor

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