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GT25Q102 Datasheet, Toshiba Semiconductor

GT25Q102 igbt equivalent, silicon n-channel igbt.

GT25Q102 Avg. rating / M : 1.0 rating-11

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GT25Q102 Datasheet

Application

Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (m.

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GT25Q102 Page 1 GT25Q102 Page 2 GT25Q102 Page 3

TAGS

GT25Q102
Silicon
N-Channel
IGBT
GT25Q101
GT25Q301
GT2530
Toshiba Semiconductor

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