GT5G102 Description
GT5G102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation High input impedance Low saturation voltage : tr < = 100 ns tf < = 100 ns Duty cycle < = 1% ¾ Min ¾ ¾ 2 ¾ ¾ Typ.