Datasheet Summary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Strobe Flash Applications
Unit: mm
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- 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A) Supplied in pact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode Peak collector current: IC = 130 A (max)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms (Note 1) Symbol VCES VGES VGES IC ICP PC Tj Tstg Rating 400 ±6 ±8 5 130 1.1 150
- 55~150 2 Unit V V
Collector current Collector power dissipation Junction temperature Storage temperature range
A W °C °C
JEDEC JEITA TOSHIBA
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