| Part number | GT5G131 |
|---|---|
| Datasheet | GT5G131_ToshibaSemiconductor.pdf |
| File Size | 289.56 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
|
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GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A) Supplied in pact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode Peak collector current:.
| Part Number | Description |
|---|---|
| GT5G133 | Silicon N-Channel IGBT |
| GT5G101 | Silicon N-Channel MOSFET |
| GT5G102 | Silicon N-Channel IGBT |
| GT5G103 | Silicon N-Channel MOSFET |
| GT50G321 | silicon N-channel IGBT |
| GT50J102 | silicon N-channel IGBT |
| GT50J121 | silicon N-channel IGBT |
| GT50J122 | silicon N-channel IGBT |
| GT50J301 | silicon N-channel IGBT |
| GT50J322 | silicon N-channel IGBT |
