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GT5G102 - Silicon N-Channel IGBT

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GT5G102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation High input impedance Low saturation voltage : VCE (sat) = 8 V (max) (IC = 130 A) · · Enhancement-mode 12 V gate drive · · · Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation Junction temperature Storage temperature range DC 1 ms Ta = 25°C Tc = 25°C Symbol VCES VGES IC ICP PC PC Tj Tstg Rating 400 ±20 5 130 1.3 20 150 -55~150 Unit V V A A W W °C °C JEDEC JEITA ― ― TOSHIBA (A) 2-7B5C (B) 2-7B6C Weight: 0.
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