| Part number | GT5G102 |
|---|---|
| Datasheet | GT5G102-ToshibaSemiconductor.pdf |
| File Size | 77.08 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
|
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GT5G102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation High input impedance Low saturation voltage : tr < = 100 ns tf < = 100 ns Duty cycle < = 1% ¾ Min ¾ ¾ 2 ¾ ¾ Typ.
| Part Number | Description |
|---|---|
| GT5G101 | Silicon N-Channel MOSFET |
| GT5G103 | Silicon N-Channel MOSFET |
| GT5G131 | Silicon N-Channel IGBT |
| GT5G133 | Silicon N-Channel IGBT |
| GT50G321 | silicon N-channel IGBT |
| GT50J102 | silicon N-channel IGBT |
| GT50J121 | silicon N-channel IGBT |
| GT50J122 | silicon N-channel IGBT |
| GT50J301 | silicon N-channel IGBT |
| GT50J322 | silicon N-channel IGBT |
