Datasheet Summary
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Strobe Flash Applications
Unit: mm 3rd Generation High input impedance Low saturation voltage : VCE (sat) = 8 V (max) (IC = 130 A)
- - Enhancement-mode 12 V gate drive
- -
- Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation Junction temperature Storage temperature range DC 1 ms Ta = 25°C Tc = 25°C Symbol VCES VGES IC ICP PC PC Tj Tstg Rating 400 ±20 5 130 1.3 20 150 -55~150 Unit V V A A W W °C °C
JEDEC JEITA
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TOSHIBA (A) 2-7B5C (B) 2-7B6C Weight: 0.036 g
Equivalent Circuit
Collector
Gate
Emitter...