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GT5G133 - Silicon N-Channel IGBT

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 GT5G133 Strobe Flash Applications • Enhancement-mode • Low gate drive voltage: VGE = 2.5 V (min) (@IC = 130 A) • Peak collector current: IC = 130 A (max) • Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 400 V DC VGES ±4 Gate-emitter voltage V Pulse VGES ±5 Collector current Pulse (Note 1) ICP 130 A Collector power (Note 2a) PC (1) 0.83 W dissipation(t = 10 s) (Note 2b) PC (2) 0.69 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g.
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