GT80J101B Description
GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Unit:.