* Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.)
* High Forward Transfer Admittance - Yfs = 4.0S (Typ.)
* Low Leakage Current - IDSS = 300µA (Max.) @ VDS = 720V
* Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C)
K1358
Toshiba ↗ Semiconductor
568.20 KB
Silicon n-channel mosfet.
TOSHIBA Discrete Semiconductors Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Current DC-DC Converter, Relay Dri.
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