K1358 - Silicon N-Channel MOSFET

Toshiba

Key Features

Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ. ).
High Forward Transfer Admittance - Yfs = 4.0S (Typ. ).
Low Leakage Current - IDSS = 300µA (Max. ) @ VDS = 720V.
Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C).

K1358 silicon n-channel mosfet by Toshiba - Datasheet Preview

Datasheet Details

Part number	K1358
Manufacturer	Toshiba
File Size	568.20 KB
Description	Silicon N-Channel MOSFET
Datasheet	K1358 Datasheet

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TOSHIBA Discrete Semiconductors Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.) • High Forward Transfer Admittance - Yfs = 4.0S (Typ.) • Low Leakage Current - IDSS = 300µA (Max.) @ VDS = 720V • Enhancement-Mode - Vth = 1.5 ~ 3.