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2SK1359
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII )
.5
2SK1359
DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode
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Unit: mm
: RDS (ON) = 3.0 Ω (typ.) : |Yfs| = 2.0 S (typ.)
: IDSS = 300 μA (max) (VDS = 800 V) : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 1000 1000 ±30 5 15 125 150 −55~150 Unit V V V A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3.
K1359 Datasheet
