K1382 Datasheet - Toshiba Semiconductor

K1382 2SK1382

2SK1382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 π MOSIII) 2SK1382 Relay Drive, Motor Drive and DC DC Converter Applications Unit: mm z 4-V gate drive z Low drain source ON resistance : RDS (ON) = 15 mΩ (typ.) z High forward transfer admittance : |Yfs| = 47 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Charact.

K1382-ToshibaSemiconductor.pdf