Datasheet4U Logo Datasheet4U.com

K15A20D - TK15A20D

Key Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 1 2011-10-10 Rev.2.0 TK15A20D 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-p.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K15A60U TK15A60U Toshiba
K150 Silicon Zener Diodes Aeroflex
K150 LOW LEVEL ZENER DIODES Knox
K150 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE Knox Inc
K150 Low Noise Audio Amplifier Applications ETC

Other Datasheets by Toshiba

Part Number Description
K15A50D Silicon N-Channel MOS Type FET
K15A60D TK15A60D
K1529 2SK1529
K1531 2SK1531
K15J50D TK15J50D

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TK15A20D MOSFETs Silicon N-Channel MOS (π-MOS) TK15A20D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 1 2011-10-10 Rev.2.0 TK15A20D 4.