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SSM3J132TU - Silicon P-Channel MOSFET

Features

  • (1) 1.2-V drive (2) Low drain-source on-resistance : RDS(ON) = 94 mΩ (max) (VGS = -1.2 V) RDS(ON) = 39 mΩ (max) (VGS = -1.5 V) RDS(ON) = 29 mΩ (max) (VGS = -1.8 V) RDS(ON) = 21 mΩ (max) (VGS = -2.5 V) RDS(ON) = 17 mΩ (max) (VGS = -4.5 V) 3. Packaging and Internal Circuit UFM SSM3J132TU 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2011-02 2021-10-22 Rev.1.0 SSM3J132TU 4. Absolute Maximum Ratings (Note) (Unless otherwise.

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MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J132TU 1. Applications • Power Management Switches 2. Features (1) 1.2-V drive (2) Low drain-source on-resistance : RDS(ON) = 94 mΩ (max) (VGS = -1.2 V) RDS(ON) = 39 mΩ (max) (VGS = -1.5 V) RDS(ON) = 29 mΩ (max) (VGS = -1.8 V) RDS(ON) = 21 mΩ (max) (VGS = -2.5 V) RDS(ON) = 17 mΩ (max) (VGS = -4.5 V) 3. Packaging and Internal Circuit UFM SSM3J132TU 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2011-02 2021-10-22 Rev.1.0 SSM3J132TU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -12 V VGSS ±6 V Drain current (DC) (Note 1) ID -5.
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