Datasheet4U Logo Datasheet4U.com

SSM3J327R Datasheet Silicon P-Channel MOSFET

Manufacturer: Toshiba

📥 Download Datasheet

Overview

MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J327R 1.

Applications • Power Management Switches 2.

Key Features

  • (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J327R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2009-12 2021-10-21 Rev.1.0 SSM3J327R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) C.

More Datasheets from Toshiba

Part Number Description
SSM3J327F Silicon P-Channel MOSFET
SSM3J321T Silicon P-Channel MOSFET
SSM3J325F Silicon P-Channel MOSFET
SSM3J328R Silicon P-Channel MOSFET
SSM3J304T Silicon P-Channel MOSFET
SSM3J305T Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J306T Silicon P-Channel MOSFET
SSM3J307T Silicon P-Channel MOSFET
SSM3J317T Power Management Switch Applications High-Speed Switching Applications
SSM3J331R Silicon P-Channel MOSFET